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Mechanism for rapid thermal annealing improvements in undoped GaNxAs1-x/GaAs structures grown by molecular beam epitaxy
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0001-7155-7103
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .ORCID iD: 0000-0002-9840-7364
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2000 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 77, no 15, 2325- p.Article in journal (Refereed) Published
Abstract [en]

 A systematic investigation of the effect of rapid thermal annealing (RTA) on optical properties of undoped GaNAs/GaAs structures is reported. Two effects are suggested to account for the observed dramatic improvement in the quality of the GaNxAs1-x/GaAs quantum structures after RTA: (i) improved composition uniformity of the GaNxAs1-x alloy, deduced from the photoluminescence (PL), PL excitation and time-resolved measurements; and (ii) significant reduction in the concentration of competing nonradiative defects, revealed by the optically detected magnetic resonance studies.

Place, publisher, year, edition, pages
2000. Vol. 77, no 15, 2325- p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-45126DOI: 10.1063/1.1315632Local ID: 79774OAI: oai:DiVA.org:liu-45126DiVA: diva2:265988
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-12-13

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Buyanova, IrinaPozina, GaliaBergman, PederChen, Weimin

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