Silicon vacancy related defect in 4H and 6H SiC
2000 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 61, no 4, 2613-2620 p.Article in journal (Refereed) Published
We report on an irradiation-induced photoluminescence (PL) band in 4H and 6H SiC and the corresponding optically detected magnetic resonance (ODMR) signals from this band. The deep PL band has the same number of no-phonon lines as there are inequivalent sites in the respective polytype. These lines are at 1352 and 1438 meV in the case of 4H and at 1366, 1398, and 1433 meV in the case of 6H. The intensity of the PL lines is reduced after a short anneal at 750░C. ODMR measurements with above-band-gap excitation show that two spin-triplet (S=1) states with a weak axial character are detected via each PL line in these bands. One of these two triplet states can be selectively excited with the excitation energy of the corresponding PL line. These triplet signals can therefore be detected separately and only then can the well documented and characteristic hyperfine interaction of the silicon vacancy in SiC be resolved. Considering the correlation between the irradiation dose and the signal strength, the well established annealing temperature and the characteristic hyperfine pattern, we suggest that this PL band is related to the isolated silicon vacancy in 4H and 6H SiC. The spin state (S=1) implies a charge state of the vacancy with an even number of electrons. By combining the knowledge from complementary electron-spin resonance measurements and theoretical calculations we hold the neutral charge state for the strongest candidate. ⌐2000 The American Physical Society.
Place, publisher, year, edition, pages
2000. Vol. 61, no 4, 2613-2620 p.
IdentifiersURN: urn:nbn:se:liu:diva-45128Local ID: 79776OAI: oai:DiVA.org:liu-45128DiVA: diva2:265990