The Carbon Vacancy Pair in 4H and 6H SiC
2000 (English)In: Materials Science Forum, Vol. 338 - 342, Trans Tech Publications , 2000, 821-824 p.Conference paper (Refereed)
Electron paramagnetic resonance (EPR) was used to study defects in p-type 4H and 6H SiC irradiated with 2.5 MeV electrons at elevated temperatures (400 °C). After irradiation, an anisotropic EPR spectrum, labeled EI4, having monoclinic symmetry (C1h) and an effective spin S = 1 was observed in both 4H and 6H SiC. The same g-tensor with the principal values, gx = 2.0051, gy = 2.0038 and gz = 2.0029 was determined for the spectra in both polytypes. Here the z- and x-axis lie in the (1 1 2̄ 0) plane and the y-axis perpendicular to this plane. The angle between the principal z-axis and the c-axis is 54°. The fine structure parameters were determined as D = 3.28×10-2 cm-1 and 3.44×10-2 cm-1 for 6H and 4H SiC, respectively; E = 0.67×10-2 cm-1 for both polytypes. From the obtained 29Si hyperfine structure and spin Hamiltionian parameters, the defect can be identified as the pair of two carbon vacancies in the (1 1 2̄ 0) or equivalent planes.
Place, publisher, year, edition, pages
Trans Tech Publications , 2000. 821-824 p.
, Materials Science Forum, ISSN 1662-9752 ; 338-342
Natural Sciences Condensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-45132DOI: 10.4028/www.scientific.net/MSF.338-342.821Local ID: 79780OAI: oai:DiVA.org:liu-45132DiVA: diva2:265994
ICSCRM'99: 8th International Conference on Silicon Carbide and Related Materials, Research Triangle Park, North Carolina, USA, 10-15 October 1999