Resonant excitation spectroscopies of GaNAs/GaAs quantum structures
2000 (English)Conference paper (Refereed)
We employ resonant optical excitation and Raman spectroscopies to study optical properties of GaNAs-based quantum structures grown by gas source molecular beam epitaxy (GS MBE). Under above band gap non-resonant excitation the PL spectra of GaNAs are shown to be dominated by the commonly observed featureless localised exciton emission. In contrast, when excitation energy is tuned close to the band edge of GaNAs alloy a series of additional narrow lines can be detected in the PL spectra. The peak positions of these lines are at about 10 meV (strongest), and at 20, 32, and 36 below the excitation energy. The dominant 10 meV line can only be excited within very narrow spectral range coinciding with the free exciton emission in GaNAs. Based on performed spectral, temperature dependent, and polarization studies the strongest 10 meV and the weaker 20 meV lines are tentatively attributed to disorder activated Raman scattering which is strongly enhanced close to the mobility edge of the GaNAs. The 32 and 36 meV lines are, on the other hand, caused by Raman scattering involving GaAs-like TO and LO phonons.
Place, publisher, year, edition, pages
Bull. Amer. Phys. Soc: APS , 2000. Vol. 45, 843- p.
IdentifiersURN: urn:nbn:se:liu:diva-45139Local ID: 79814OAI: oai:DiVA.org:liu-45139DiVA: diva2:266001
American Physical Society, Annual March Meeting, 20-24 March 2000, Minneapolis, Minnesota, USA