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Mechanism for Light Emission in GaNAs/GaAs Structures Grown by Molecular Beam Epitaxy
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0001-7155-7103
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0002-6405-9509
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .ORCID iD: 0000-0002-9840-7364
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
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1999 (English)In: Physica status solidi. B, Basic research, ISSN 0370-1972, E-ISSN 1521-3951, Vol. 216, no 1, 125-129 p.Article in journal (Refereed) Published
Abstract [en]

 A detailed photoluminescence (PL) study reveals that the low-temperature PL emission in GaNAs epilayers and GaAs/GaNxAs1 - x quantum well structures grown by molecular beam epitaxy is governed by recombination of localized excitons. This conclusion is based on the analysis of the PL lineshape, its dependence on the excitation power and measurement temperature, as well as PL transient data. The depth of the localization potential is estimated as about 60 meV, varying slightly among the different structures.

Place, publisher, year, edition, pages
1999. Vol. 216, no 1, 125-129 p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-45144DOI: 10.1002/SICI1521-3951199911216:1<125::AID-PSSB125>3.0.CO;2-3Local ID: 79819OAI: oai:DiVA.org:liu-45144DiVA: diva2:266006
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-12-13

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Buyanova, IrinaChen, WeiminPozina, GaliaMonemar, Bo

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