Electron-paramagnetic-resonance studies of defects in electron-irradiated p-type 4H and 6H SiC
1999 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, Vol. 273-274, 655-658 p.Article in journal (Refereed) Published
Defects in p-type 4H and 6H SiC irradiated by 2.5 MeV electrons were studied by electron paramagnetic resonance (EPR). Two anisotropic EPR spectra, labeled I and II, were observed in both 4H and 6H SiC. These spectra demonstrating triclinic symmetry of the center can be described by an effective electron spin S=1/2. The angle α between the direction of the principal gz of the g-tensors and the c-axis is determined as 63° and 50° for spectra I and II, respectively. In the 6H polytype, a third also similar EPR spectrum was detected. Based on their similarity in the electronic structure (electron spin, symmetry, g values), annealing behavior and temperature dependence, these spectra are suggested to be related to the same defect occupying different inequivalent lattice sites in 4H and 6H SiC. A pair between a silicon vacancy and an interstitial is a possible model for the defect.
Place, publisher, year, edition, pages
1999. Vol. 273-274, 655-658 p.
IdentifiersURN: urn:nbn:se:liu:diva-45145DOI: 10.1016/S0921-45269900597-9Local ID: 79820OAI: oai:DiVA.org:liu-45145DiVA: diva2:266007