Thermal stability and doping efficiency of intrinsic modulation doping in InP-based structures
1999 (English)In: Applied Physics Letters, ISSN 0003-6951, Vol. 75, no 12, 1733- p.Article in journal (Refereed) Published
Doping efficiency and thermal stability of intrinsic modulation doping in InP/InGaAs heterostructures, where intrinsic defects (PInantisites) are used as an electron source, are investigated. A high efficiency of the intrinsic doping is demonstrated from a comparison between the intrinsically doped and conventional extrinsically doped structures. The thermal stability of the intrinsically doped heterostructures is shown to be largely affected by the thermal stability of the InP surface.
Place, publisher, year, edition, pages
1999. Vol. 75, no 12, 1733- p.
IdentifiersURN: urn:nbn:se:liu:diva-45147DOI: 10.1063/1.124802Local ID: 79832OAI: oai:DiVA.org:liu-45147DiVA: diva2:266009