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Thermal stability and doping efficiency of intrinsic modulation doping in InP-based structures
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0001-7155-7103
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0002-6405-9509
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1999 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 75, no 12, 1733- p.Article in journal (Refereed) Published
Abstract [en]

 Doping efficiency and thermal stability of intrinsic modulation doping in InP/InGaAs heterostructures, where intrinsic defects (PInantisites) are used as an electron source, are investigated. A high efficiency of the intrinsic doping is demonstrated from a comparison between the intrinsically doped and conventional extrinsically doped structures. The thermal stability of the intrinsically doped heterostructures is shown to be largely affected by the thermal stability of the InP surface.

Place, publisher, year, edition, pages
1999. Vol. 75, no 12, 1733- p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-45147DOI: 10.1063/1.124802Local ID: 79832OAI: oai:DiVA.org:liu-45147DiVA: diva2:266009
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-12-13

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Buyanova, IrinaChen, Weimin

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