Optically detected magnetic resonance studies of intrinsic defects in 6H-SiC
1999 (English)In: Semiconductor Science and Technology, ISSN 0268-1242, Vol. 14, no 12, 1141-1146 p.Article in journal (Refereed) Published
Optically detected magnetic resonance (ODMR) was used for study of defects in n-type 6H-SiC. Four ODMR spectra related to spin S = 1 centres were observed. Two of these centres, labelled a and b, have a trigonal symmetry with the symmetry axis along the c-axis of the hexagonal crystal. For the other two centres, labelled c and d, the symmetry is lower (C1h) and the principal axis z of the g- and D-tensor is about 71 degrees off the c-axis. Based on the symmetry axes, the annealing behaviour and the intensity, these spectra are suggested to originate from different configurations of the paired centre between a silicon vacancy and a nearest-neighbour point defect (either a carbon vacancy or a silicon antisite), occupying different inequivalent sites in the 6H-SiC. These defects are non-radiative and act as efficient recombination channels in the material.
Place, publisher, year, edition, pages
1999. Vol. 14, no 12, 1141-1146 p.
National CategoryNatural Sciences
IdentifiersURN: urn:nbn:se:liu:diva-45151Local ID: 79836OAI: oai:DiVA.org:liu-45151DiVA: diva2:266013