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Magnetooptical investigations on electron irradiated GaN
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0001-7155-7103
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0002-6405-9509
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
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1999 (English)In: Physica Scripta, ISSN 0031-8949, E-ISSN 1402-4896, Vol. T79, 53-55 p.Article in journal (Refereed) Published
Abstract [en]

Optically Detected Magnetic Resonance (ODMR) and Level Anti-Crossing (LAC) experiments are employed to characterize the properties of two photoluminescence bands at 0.93 eV and 0.875 eV observable in electron irradiated GaN. Only one almost isotropic ODMR line and no LAC feature appear when monitoring the 0.93 eV emission, whereas two ODMR and two LAC signals can be found connected to the 0.875 eV band from spectral dependence studies. One possible explanation for the recombination leading to the 0.875 eV emission is a transition between excited states and ground state of a deep donor, where the ODMR signals arise from microwave induced transitions within the manifold of excited states. Within this manifold avoided crossings of the magnetic sublevels give rise to the observed LAC signals.

Place, publisher, year, edition, pages
1999. Vol. T79, 53-55 p.
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Natural Sciences Condensed Matter Physics
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URN: urn:nbn:se:liu:diva-45153DOI: 10.1238/Physica.Topical.079a00053Local ID: 79838OAI: oai:DiVA.org:liu-45153DiVA: diva2:266015
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-12-13

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Wagner, MatthiasBuyanova, IrinaChen, WeiminMonemar, Bo

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