liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
A complex defect related to the carbon vacancy in 4H and 6H SiC
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0002-6405-9509
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Show others and affiliations
1999 (English)In: Physica Scripta, ISSN 0031-8949, E-ISSN 1402-4896, Vol. T79, 46-49 p.Article in journal (Refereed) Published
Abstract [en]

 Electron paramagnetic resonance (EPR) was used to study defects in 4H and 6H SiC irradiated with 2.5 MeV electrons at room temperature. When the dose of irradiation reaches ~ 5 × 1017 electrons/cm2, an EPR spectrum appears. In both 4H and 6H SiC, the defect associated with this spectrum has C1h symmetry with an effective electron spin S = 1 and an isotropic g-value of 2.0063 ± 0.0002. The crystal-field parameter was determined as D = 1.65 and D = 1.67 GHz for 4H and 6H SiC, respectively. The principal crystal-field axis lies in the (11bar 20) plane and makes an angle of ~ 46° with the c-axis for both polytypes. A clear hyperfine structure from 29Si due to the interaction with four nearest silicon neighbours was observed, confirming that the defect is related to the carbon vacancy. The similarity in all respects including the annealing behaviour of the spectrum in both polytypes suggests that it belongs to the same defect. Based on the formation and its electronic structure, the defect is suggested to be a complex with one of the components being the carbon vacancy.

Place, publisher, year, edition, pages
1999. Vol. T79, 46-49 p.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-45154DOI: 10.1238/Physica.Topical.079a00046Local ID: 79839OAI: oai:DiVA.org:liu-45154DiVA: diva2:266016
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-12-13

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Nguyen, Son TienChen, WeiminMonemar, BoJanzén, Erik

Search in DiVA

By author/editor
Nguyen, Son TienChen, WeiminMonemar, BoJanzén, Erik
By organisation
The Institute of TechnologyMaterials Science Functional Electronic Materials
In the same journal
Physica Scripta
Natural Sciences

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 101 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf