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Role of the Substitutional Oxygen Donor in the Residual n-type Conductivity in GaN
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0002-6405-9509
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0001-7155-7103
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
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1999 (English)Conference paper, Published paper (Refereed)
Abstract [en]

 A detailed photoluminescence (PL) study reveals a striking similarity in local vibrational properties of a defect center in GaN as compared to that for the substitutional OP donor in GaP. This observation could be interpreted as if the center is in fact related to the substitutional oxygen donor in GaN. The deep-level nature experimentally determined for the defect center calls for caution of a commonly referred model that the substitutional oxygen donor is responsible for the residual n-type conductivity in GaN.

Place, publisher, year, edition, pages
MRS Internet J. Nitride Semiconductor Research, Vol. 4S1: MRS , 1999. G5.4- p.
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Natural Sciences
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URN: urn:nbn:se:liu:diva-45156Local ID: 79841OAI: oai:DiVA.org:liu-45156DiVA: diva2:266018
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-03-27

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http://nsr.mij.mrs.org/4S1/G5.4/

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Chen, WeiminBuyanova, IrinaWagner, MatthiasMonemar, Bo

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