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Internal transitions of a deep level defect in GaN studied by photoluminescence and optically detected magnetic resonance
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0001-7155-7103
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0002-6405-9509
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
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1999 (English)In: 24th International Conference on the Physics of Semiconductors,1998, Proc. of the 24th International Conference on the Physics of Semiconductors, ed. by D. Gershoni: World Scientific, Singapore , 1999, IX B 3- p.Conference paper, Published paper (Other academic)
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Proc. of the 24th International Conference on the Physics of Semiconductors, ed. by D. Gershoni: World Scientific, Singapore , 1999. IX B 3- p.
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URN: urn:nbn:se:liu:diva-45160Local ID: 79872OAI: oai:DiVA.org:liu-45160DiVA: diva2:266022
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2017-03-27

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Wagner, MatthiasBuyanova, IrinaChen, WeiminMonemar, Bo

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