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Defects in SiC
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.ORCID iD: 0000-0001-5768-0244
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
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2008 (English)In: Defects in Microelectronic Materials and Devices / [ed] Daniel M. Fleetwood, Sokrates T. Pantelides, Ronald D. Schrimpf., Taylor and Francis LLC , 2008, 770- p.Chapter in book (Other academic)
Abstract [en]

Uncover the Defects that Compromise Performance and Reliability As microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.

A comprehensive survey of defects that occur in silicon-based metal-oxide semiconductor field-effect transistor (MOSFET) technologies, this book also discusses flaws in linear bipolar technologies, silicon carbide-based devices, and gallium arsenide materials and devices. These defects can profoundly affect the yield, performance, long-term reliability, and radiation response of microelectronic devices and integrated circuits (ICs). Organizing the material to build understanding of the problems and provide a quick reference for scientists, engineers and technologists, this text reviews yield- and performance-limiting defects and impurities in the device silicon layer, in the gate insulator, and/or at the critical Si/SiO2 interface. It then examines defects that impact production yield and long-term reliability, including:

  • Vacancies, interstitials, and impurities (especially hydrogen)

  • Negative bias temperature instabilities

  • Defects in ultrathin oxides (SiO2 and silicon oxynitride)

Take A Proactive Approach The authors condense decades of experience and perspectives of noted experimentalists and theorists to characterize defect properties and their impact on microelectronic devices. They identify the defects, offering solutions to avoid them and methods to detect them. These include the use of 3-D imaging, as well as electrical, analytical, computational, spectroscopic, and state-of-the-art microscopic methods. This book is a valuable look at challenges to come from emerging materials, such as high-K gate dielectrics and high-mobility substrates being developed to replace Si02 as the preferred gate dielectric material, and high-mobility substrates

Place, publisher, year, edition, pages
Taylor and Francis LLC , 2008. 770- p.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-45165Local ID: 79879ISBN: 9-781-42004-376-1 ISBN: 1-420-04-376-5 OAI: oai:DiVA.org:liu-45165DiVA: diva2:266027
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2014-10-08Bibliographically approved

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find book at a swedish library/hitta boken i ett svenskt bibliotekläs hela texten

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Janzén, ErikGali, AdamHenry, AnneIvanov, Ivan GueorguievMagnusson, BjörnNguyen, Son Tien

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Janzén, ErikGali, AdamHenry, AnneIvanov, Ivan GueorguievMagnusson, BjörnNguyen, Son Tien
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The Institute of TechnologySemiconductor MaterialsDepartment of Physics, Chemistry and Biology
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