liu.seSearch for publications in DiVA
Change search
ReferencesLink to record
Permanent link

Direct link
Mechanism of radiative recombination in acceptor-doped bulk GaN crystals
Show others and affiliations
1999 (English)In: 20th International Conference on Defects in Semiconductors ICDS-20,1999, Physica B, Vol. 273-274: Elsevier , 1999, 39- p.Conference paper (Refereed)
Abstract [en]

 Optical and electrical properties of acceptor-doped bulk GaN crystals are discussed. Though introducing Zn and Ca to bulk GaN does not significantly change electron concentration, it results in the appearance of a blue photoluminescence band accompanying the relatively strong yellow band usually present. Highly resistive GaN : Mg crystals are obtained when high amount of Mg is introduced to the Ga melt during high-pressure synthesis. Change of electrical properties of Mg-doped bulk crystals is accompanied by the appearance of a strong blue emission of GaN similar to that in Ca- and Zn-doped crystals. Optically detected magnetic resonance investigations indicate a multi-band character of this blue emission and suggest possible mechanism of compensation in acceptor-doped bulk GaN.

Place, publisher, year, edition, pages
Physica B, Vol. 273-274: Elsevier , 1999. 39- p.
National Category
Natural Sciences
URN: urn:nbn:se:liu:diva-45166DOI: 10.1016/S0921-45269900401-9Local ID: 79890OAI: diva2:266028
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2013-10-02

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Bergman, PederChen, WeiminMonemar, Bo
By organisation
The Institute of TechnologyMaterials Science Functional Electronic Materials
Natural Sciences

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 64 hits
ReferencesLink to record
Permanent link

Direct link