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Mechanism of radiative recombination in acceptor-doped bulk GaN crystals
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1999 (English)In: 20th International Conference on Defects in Semiconductors ICDS-20,1999, Physica B, Vol. 273-274: Elsevier , 1999, 39- p.Conference paper (Refereed)
Abstract [en]

 Optical and electrical properties of acceptor-doped bulk GaN crystals are discussed. Though introducing Zn and Ca to bulk GaN does not significantly change electron concentration, it results in the appearance of a blue photoluminescence band accompanying the relatively strong yellow band usually present. Highly resistive GaN : Mg crystals are obtained when high amount of Mg is introduced to the Ga melt during high-pressure synthesis. Change of electrical properties of Mg-doped bulk crystals is accompanied by the appearance of a strong blue emission of GaN similar to that in Ca- and Zn-doped crystals. Optically detected magnetic resonance investigations indicate a multi-band character of this blue emission and suggest possible mechanism of compensation in acceptor-doped bulk GaN.

Place, publisher, year, edition, pages
Physica B, Vol. 273-274: Elsevier , 1999. 39- p.
National Category
Natural Sciences
URN: urn:nbn:se:liu:diva-45166DOI: 10.1016/S0921-45269900401-9Local ID: 79890OAI: diva2:266028
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2013-10-02

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Bergman, PederChen, WeiminMonemar, Bo
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The Institute of TechnologyMaterials Science Functional Electronic Materials
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