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Properties of the neutral silicon vacancy in 6H SiC
Wagner, Matthias
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Sörman, E.
Hallin, Christer
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Lindström, J. L.
Chen, Weimin
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.
ORCID iD:
0000-0002-6405-9509
Janzén, Erik
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Show others and affiliations
1999 (English)
Conference paper, Published paper (Other academic)
Abstract [en]
Place, publisher, year, edition, pages
1999. p. 254-
National Category
Natural Sciences
Identifiers
URN:
urn:nbn:se:liu:diva-45170
Local ID: 79894
OAI: oai:DiVA.org:liu-45170
DiVA, id:
diva2:266032
Conference
XXVIII International School on Physics of Semiconducting Compounds Jaszowiec '99
Note
Extended Abstract
Available from:
2009-10-10
Created:
2009-10-10
Last updated:
2013-10-02
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No full text in DiVA
Authority records
Wagner, Matthias
Hallin, Christer
Chen, Weimin
Janzén, Erik
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Wagner, Matthias
Hallin, Christer
Chen, Weimin
Janzén, Erik
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The Institute of Technology
Semiconductor Materials
Department of Physics, Chemistry and Biology
Functional Electronic Materials
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apa
ieee
modern-language-association-8th-edition
vancouver
oxford
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apa
ieee
modern-language-association-8th-edition
vancouver
oxford
Other style
More styles
Language
de-DE
en-GB
en-US
fi-FI
nn-NO
nn-NB
sv-SE
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de-DE
en-GB
en-US
fi-FI
nn-NO
nn-NB
sv-SE
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text
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html
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