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Properties of the neutral silicon vacancy in 6H SiC
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
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1999 (English)Conference paper, Published paper (Other academic)
Abstract [en]

  

Place, publisher, year, edition, pages
1999. 254- p.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-45170Local ID: 79894OAI: oai:DiVA.org:liu-45170DiVA: diva2:266032
Conference
XXVIII International School on Physics of Semiconducting Compounds Jaszowiec '99
Note
Extended AbstractAvailable from: 2009-10-10 Created: 2009-10-10 Last updated: 2013-10-02

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Wagner, MatthiasHallin, ChristerChen, WeiminJanzén, Erik

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Wagner, MatthiasHallin, ChristerChen, WeiminJanzén, Erik
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The Institute of TechnologySemiconductor MaterialsDepartment of Physics, Chemistry and BiologyFunctional Electronic Materials
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