Electronic structure of deep defects in SiC
2004 (English)In: Silicon Carbide: Recent Major Advances / [ed] W.J. Choyke, H. Matsunami, G. Pens, Berlin, Heidelberg: Springer Verlag , 2004, -899 p.Chapter in book (Other academic)
Since the 1997 publication of Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC. The book is divided into five main categories: theory, crystal growth, characterization, processing and devices. Every attempt has been made to make the articles as up-to-date as possible and assure the highest standards of accuracy. As was the case for earlier SiC books, many of the articles will be relevant a decade from now so that this book will take its place next to the earlier work as a permanent and essential reference volume.
Place, publisher, year, edition, pages
Berlin, Heidelberg: Springer Verlag , 2004. -899 p.
, Advanced texts in physics, ISSN 1439-2674
IdentifiersURN: urn:nbn:se:liu:diva-45173Local ID: 79898ISBN: 978-3-540-40458-3ISBN: 3-540-40458-9OAI: oai:DiVA.org:liu-45173DiVA: diva2:266035