Photo-EPR Studies on Low-Energy Electron-irradiated 4H-SiC
2009 (English)In: Materials Science Forum, Vols. 615-617, Materials Science Forum Vols. 615-617: Trans Tech Publications , 2009, 401-404 p.Conference paper (Refereed)
Photoexcitation electron paramagnetic resonance (photo-EPR) was used to determine deep levels related to the carbon vacancy (VC) in 4H-SiC. High-purity free-standing n-type 4H-SiC epilayers with concentration of intrinsic defects (except the photo-insensitive SI1 center) below the detection limit of EPR were irradiated with low-energy (200 keV) electrons to create mainly VC and defects related to the C sublattice. The simultaneous observation of and signals, their relative intensity changes and the absence of other defects in the sample provide a more straight and reliable interpretation of the photo-EPR results. The study suggests that the (+|0) level of VC is located at ~EC–1.77 eV in agreement with previously reported results and its single and double acceptor levels may be at ~ EC–0.8 eV and ~ EC–1.0 eV, respectively.
Place, publisher, year, edition, pages
Materials Science Forum Vols. 615-617: Trans Tech Publications , 2009. 401-404 p.
National CategoryNatural Sciences
IdentifiersURN: urn:nbn:se:liu:diva-45289DOI: 10.4028/www.scientific.net/MSF.615-617.401Local ID: 80731ISBN: 978-087849334-0OAI: oai:DiVA.org:liu-45289DiVA: diva2:266151
7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008; Barcelona; Spain