On-axis Homoepitaxy on Full 2- 4H-SiC Wafer for High Power Applications
2009 (English)In: Materials Science Forum Vols. 615-617, Trans Tech Publications , 2009, 133-136 p.Conference paper (Refereed)
Homoepitaxial growth has been performed on Si-face nominally on-axis 4H-SiC substrates. Special attention was paid to the surface preparation before starting the growth. Si-face polished surfaces were studied after etching under C-rich, Si-rich and under pure hydrogen ambient conditions. In-situ surface preparation, starting growth parameters and growth temperature are found to play a vital role to maintain the polytype stability in the epilayer. High quality epilayers with 100% 4H-SiC were obtained on full 2” wafer. Complete PiN structure was grown and more than 70% of the diodes showed a stable behavior and the forward voltage drift was less than 0.1 V. Also, a comparison of the electroluminescence images of diodes before and after heavy injection of 125 A/cm2 for 30 min did not show any sign of stacking fault formation in the device active region.
Place, publisher, year, edition, pages
Trans Tech Publications , 2009. 133-136 p.
IdentifiersURN: urn:nbn:se:liu:diva-45291DOI: 10.4028/www.scientific.net/MSF.615-617.133Local ID: 80733ISBN: 978-087849334-0OAI: oai:DiVA.org:liu-45291DiVA: diva2:266153
7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008; Barcelona; Spain