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On-axis Homoepitaxy on Full 2- 4H-SiC Wafer for High Power Applications
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.ORCID iD: 0000-0001-5768-0244
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2009 (English)In: Materials Science Forum Vols. 615-617, Trans Tech Publications , 2009, 133-136 p.Conference paper, Published paper (Refereed)
Abstract [en]

Homoepitaxial growth has been performed on Si-face nominally on-axis 4H-SiC substrates. Special attention was paid to the surface preparation before starting the growth. Si-face polished surfaces were studied after etching under C-rich, Si-rich and under pure hydrogen ambient conditions. In-situ surface preparation, starting growth parameters and growth temperature are found to play a vital role to maintain the polytype stability in the epilayer. High quality epilayers with 100% 4H-SiC were obtained on full 2” wafer. Complete PiN structure was grown and more than 70% of the diodes showed a stable behavior and the forward voltage drift was less than 0.1 V. Also, a comparison of the electroluminescence images of diodes before and after heavy injection of 125 A/cm2 for 30 min did not show any sign of stacking fault formation in the device active region.

Place, publisher, year, edition, pages
Trans Tech Publications , 2009. 133-136 p.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-45291DOI: 10.4028/www.scientific.net/MSF.615-617.133Local ID: 80733ISBN: 978-087849334-0 (print)OAI: oai:DiVA.org:liu-45291DiVA: diva2:266153
Conference
7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008; Barcelona; Spain
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2014-10-08

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ul-Hassan, JawadBergman, PederHenry, AnneJanzén, Erik

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