Structural Properties of 3C-SiC Grown by Sublimation Epitaxy
2009 (English)In: ECSCRM2009,2009, Materials Science Forum Vols. 615-617: Trans Tech Publications , 2009, 181-184 p.Conference paper (Refereed)
The present paper deals with morphological and structural investigation of 3C-SiC layers grown by sublimation epitaxy on on axis 6H-SiC(0001) at source temperature 2000 °C, under vacuum conditions (<10-5 mbar) and different temperature gradients in the range of 5-8 °C/mm. The layer grown at a temperature gradient 6 °C/mm has the largest average domain size of 0.4 mm2 assessed by optical microscope in transmission mode. The rocking curve full width at half maximum (FWHM) of (111) reflection is 43 arcsec which suggests good crystalline quality. The AFM image of the same layer shows steps with height 0.25 nm and 0.75 nm which are characteristic of a stacking fault free 3C-SiC surface and c-axis repeat height, respectively.
Place, publisher, year, edition, pages
Materials Science Forum Vols. 615-617: Trans Tech Publications , 2009. 181-184 p.
IdentifiersURN: urn:nbn:se:liu:diva-45292DOI: 10.4028/www.scientific.net/MSF.615-617.181Local ID: 80736ISBN: 978-087849334-0OAI: oai:DiVA.org:liu-45292DiVA: diva2:266154
7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008; Barcelona; Spain