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Growth of 4H-SiC Epitaxial Layers on 4° Off-axis Si-face substrates
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.ORCID iD: 0000-0001-5768-0244
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.ORCID iD: 0000-0002-7171-5383
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2009 (English)In: Materials Science Forum, Vols. 615-617, Trans Tech Publications , 2009, 81-84 p.Conference paper, Published paper (Refereed)
Abstract [en]

CVD growth of epitaxial layers with a mirror like surface grown on 75 mm diameter 4° off-axis 4H SiC substrates is demonstrated. The effect of the C/Si ratio, temperature and temperature ramp up conditions is studied in detail. A low C/Si ratio of 0.4 and a temperature of 1530 °C is the best combination to avoid step bunching and triangular defects on the epitaxial layers. Using a low growth rate (about 3 µm/h) 6 μm thick, n-type doped epilayers were grown on 75 mm diameter wafers resulting in an RMS value of 0.7 nm and good reproducibility. 20 μm thick epitaxial layers with a background doping in the low 1014 cm-3 were grown with a mirror-like, defect-free surface. Preliminary results when using higher Si/H2 ratio (up to 0.4 %) and HCl addition are also presented: growth rate of 28 μm/h is achieved while keeping a smooth morphology.

Place, publisher, year, edition, pages
Trans Tech Publications , 2009. 81-84 p.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-45293DOI: 10.4028/www.scientific.net/MSF.615-617.81Local ID: 80750ISBN: 978-087849334-0 (print)OAI: oai:DiVA.org:liu-45293DiVA: diva2:266155
Conference
7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008; Barcelona; Spain
Available from: 2009-10-10 Created: 2009-10-10 Last updated: 2015-03-11

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Henry, AnneLeone, StefanoPedersen, HenrikKordina, OlleJanzén, Erik

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