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Magnetron sputter epitaxy of wurtzite Al1-x Inx N (0.1
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.ORCID iD: 0000-0001-9140-6724
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.ORCID iD: 0000-0002-2837-3656
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.
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2005 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 97, no 8, 083503- p.Article in journal (Refereed) Published
Abstract [en]

Ternary wurtzite Al1-x Inx N thin films with compositions throughout the miscibility gap have been grown onto seed layers of TiN and ZrN by magnetron sputter epitaxy (MSE) using dual reactive direct current magnetron sputter deposition under ultra high vacuum conditions. The film compositions were calculated using Vegard's law from lattice parameters determined by x-ray diffraction (XRD). XRD showed that single-phase Al1-x Inx N alloy films in the wurtzite structure with [0.10 TiN,ZrN <110>. At higher substrate temperatures almost pure AlN was formed. The microstructure of the films was also investigated by high-resolution electron microscopy. A columnar growth mode with epitaxial column widths from 10 to 200 nm was observed. Rocking curve full-width-at-half-maximum measurements revealed highly stressed lattices for growth onto TiN at 600°C. Pseudobinary MSE growth phase field diagrams for Al1-x Inx N onto ZrN and TiN were established for substrate temperatures up to 1000°C. Large regimes for single-phase solid solutions were thus identified with In being the diffusing species. © 2005 American Institute of Physics.

Place, publisher, year, edition, pages
2005. Vol. 97, no 8, 083503- p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-45463DOI: 10.1063/1.1870111OAI: oai:DiVA.org:liu-45463DiVA: diva2:266359
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Seppänen, TimoPersson, PerHultman, LarsBirch, Jens

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