liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
High-quality 2? bulk-like free-standing GaN grown by HydrideVapour phase epitaxy on a Si-doped metal organic vapour phase epitaxial GaN template with an ultra low dislocation density
Department of Physics and Measurement Technology, Linkoping University, Linkoping S-581 83, Sweden, Central Laboratory of Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, Blvd. Tzarigradsko shose 72, Sofia 1784, Bulgaria.
Department of Physics and Measurement Technology, Linkoping University, Linkoping S-581 83, Sweden.
Department of Physics and Measurement Technology, Linkoping University, Linkoping S-581 83, Sweden.
Department of Physics and Measurement Technology, Linkoping University, Linkoping S-581 83, Sweden.
Show others and affiliations
2005 (English)In: Japanese Journal of Applied Physics, ISSN 0021-4922, Vol. 44, no 3, 1181-1185 p.Article in journal (Refereed) Published
Abstract [en]

High-quality 2? crack-free free-standing GaN has been attained by hydride vapour phase epitaxial growth on a Si-doped MOVPE GaN template with a low dislocation density and subsequent laser-induced lift-off process. A low value of dislocation density of ~2.0 × 107cm-2 on the Ga-polar face was determined from cathodoluminescence images. X-ray diffraction (XRD) and low-temperature photoluminescence (PL) were exploited to investigate the structural and optical properties of the GaN material. The full width at half maximum value of XRD ?-scan of the free-standing GaN is 248 arcsec for the (1 0 1 4) reflection. The XRD and low-temperature PL mapping measurements consistently proved the high crystalline quality as well as the lateral homogeneity and the small residual stress of the material. Hence, the bulk-like free-standing GaN studied here is highly advantageous for being used as a lattice-constant and thermal-expansion-coefficient matched substrate for additional strain-free homoepitaxy of III-nitrides-based device heterostructures. The strain-free homoepitaxy will significantly reduce the defect density and thus, an improvement of the device performance and lifetime could be achieved. © 2005 The Japan Society of Applied Physics.

Place, publisher, year, edition, pages
2005. Vol. 44, no 3, 1181-1185 p.
Keyword [en]
Bulk-like, Free-standing, GaN, HVPE
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-45504DOI: 10.1143/JJAP.44.1181OAI: oai:DiVA.org:liu-45504DiVA: diva2:266400
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2011-01-12

Open Access in DiVA

No full text

Other links

Publisher's full text
In the same journal
Japanese Journal of Applied Physics
Natural Sciences

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 105 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf