High-quality 2? bulk-like free-standing GaN grown by HydrideVapour phase epitaxy on a Si-doped metal organic vapour phase epitaxial GaN template with an ultra low dislocation density
2005 (English)In: Japanese Journal of Applied Physics, ISSN 0021-4922, Vol. 44, no 3, 1181-1185 p.Article in journal (Refereed) Published
High-quality 2? crack-free free-standing GaN has been attained by hydride vapour phase epitaxial growth on a Si-doped MOVPE GaN template with a low dislocation density and subsequent laser-induced lift-off process. A low value of dislocation density of ~2.0 × 107cm-2 on the Ga-polar face was determined from cathodoluminescence images. X-ray diffraction (XRD) and low-temperature photoluminescence (PL) were exploited to investigate the structural and optical properties of the GaN material. The full width at half maximum value of XRD ?-scan of the free-standing GaN is 248 arcsec for the (1 0 1 4) reflection. The XRD and low-temperature PL mapping measurements consistently proved the high crystalline quality as well as the lateral homogeneity and the small residual stress of the material. Hence, the bulk-like free-standing GaN studied here is highly advantageous for being used as a lattice-constant and thermal-expansion-coefficient matched substrate for additional strain-free homoepitaxy of III-nitrides-based device heterostructures. The strain-free homoepitaxy will significantly reduce the defect density and thus, an improvement of the device performance and lifetime could be achieved. © 2005 The Japan Society of Applied Physics.
Place, publisher, year, edition, pages
2005. Vol. 44, no 3, 1181-1185 p.
Bulk-like, Free-standing, GaN, HVPE
IdentifiersURN: urn:nbn:se:liu:diva-45504DOI: 10.1143/JJAP.44.1181OAI: oai:DiVA.org:liu-45504DiVA: diva2:266400