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Surface electronic structure of K- and Cs-induced √21×√21 phases on Ag∕Si(111)√3×√3
Linköping University, Department of Physics, Chemistry and Biology, Surface and Semiconductor Physics. Linköping University, The Institute of Technology.
Department of Physics, Graduate School of Science, Tohoku University, Japan.
Linköping University, Department of Physics, Chemistry and Biology, Surface and Semiconductor Physics. Linköping University, The Institute of Technology.
2004 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 70, no 24, 245301- p.Article in journal (Refereed) Published
Abstract [en]

A √21×√21 reconstruction has been formed by adding either K or Cs atoms on the Ag∕Si(111)√3×√3 surface at 120 K. The electronic structures of these surfaces have been studied by angle-resolved valence band and core-level spectroscopy. In similarity with Ag or Au adatoms, the presence of K or Cs adatoms on Ag∕Si(111)√3×√3 results in a metallic √21×√21 surface. The formation of two surface bands near the Fermi level can be explained by band folding of a partially occupied surface band originating from the underlying Ag∕Si(111)√3×√3 surface. A detailed analysis of the Si 2p core-level spectra of the above surfaces is presented and compared to the Ag∕Si(111)√3×√3 surface. In the case of Ag∕Si(111)√3×√3, we find that the metallic tail of the Si 2p spectra is related to extra Ag. Both the valence band and the Si 2p spectra of the Ag∕Si(111)√3×√3 surface show that the surface is semiconducting after annealing at ∼600°C.

Place, publisher, year, edition, pages
2004. Vol. 70, no 24, 245301- p.
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Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-45575DOI: 10.1103/PhysRevB.70.245301ISI: 000226112300059OAI: oai:DiVA.org:liu-45575DiVA: diva2:266471
Available from: 2013-03-27 Created: 2009-10-11 Last updated: 2017-12-13Bibliographically approved

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Zhang, HanminUhrberg, Roger I.G.

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Surface and Semiconductor PhysicsThe Institute of Technology
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