Initial oxidation process of an Si(111)-(7 × 7) surface studied by photoelectron spectroscopy
2004 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 464-465, 10-13 p.Article in journal (Refereed) Published
We have investigated the initial oxidation stage of an Si(111)-(7 × 7) surface using valence-band photoemission measurements. As the oxygen exposure increases, the intensities of the dangling bond states of adatoms (S 1) and rest atoms (S2) decrease. Among the four oxygen-induced states, three originate from the orbitals of adsorbed oxygen species, and one originates from the dangling bonds of adatoms with more than one oxygen atom adsorbed into its back-bond. Taking the dosage-dependent intensity of this modified dangling bond state into account, we conclude that the first adsorption site of oxygen is the back-bond of an adatom. © 2004 Elsevier B.V. All rights reserved.
Place, publisher, year, edition, pages
2004. Vol. 464-465, 10-13 p.
Adsorbate structure, Oxidation process, Photoelectron spectroscopy, Silicon surface
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-45614DOI: 10.1016/j.tsf.2004.06.038OAI: oai:DiVA.org:liu-45614DiVA: diva2:266510