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Initial oxidation process of an Si(111)-(7 × 7) surface studied by photoelectron spectroscopy
Department of Physics, Graduate School of Science, Tohoku University, Sendai 980-8578, Japan.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Surface and Semiconductor Physics. (Yt- och Halvledarfysik, Surface and Semiconductor Physics)
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Surface and Semiconductor Physics.
2004 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 464-465, 10-13 p.Article in journal (Refereed) Published
Abstract [en]

We have investigated the initial oxidation stage of an Si(111)-(7 × 7) surface using valence-band photoemission measurements. As the oxygen exposure increases, the intensities of the dangling bond states of adatoms (S 1) and rest atoms (S2) decrease. Among the four oxygen-induced states, three originate from the orbitals of adsorbed oxygen species, and one originates from the dangling bonds of adatoms with more than one oxygen atom adsorbed into its back-bond. Taking the dosage-dependent intensity of this modified dangling bond state into account, we conclude that the first adsorption site of oxygen is the back-bond of an adatom. © 2004 Elsevier B.V. All rights reserved.

Place, publisher, year, edition, pages
2004. Vol. 464-465, 10-13 p.
Keyword [en]
Adsorbate structure, Oxidation process, Photoelectron spectroscopy, Silicon surface
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-45614DOI: 10.1016/j.tsf.2004.06.038OAI: oai:DiVA.org:liu-45614DiVA: diva2:266510
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Zhang, HanminUhrberg, Roger

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