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Free-to-bound radiative recombination in highly conducting InN epitaxial layers
Faculty of Physics, Sofia University, 5 J. Bourchier Blvd, 1164 Sofia, Bulgaria.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
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2004 (English)In: Superlattices and Microstructures, ISSN 0749-6036, E-ISSN 1096-3677, Vol. 36, no 4-6, 563-571 p.Article in journal (Refereed) Published
Abstract [en]

We present a theoretical simulation of near-band-edge emission spectra of highly conducting n-InN assuming the model of 'free-to-bound' radiative recombination (FBRR) of degenerate electrons from the conduction band with nonequilibrium holes located in the valence band tails. We also study experimental photoluminescence (PL) spectra of highly conducting InN epitaxial layers grown by MBE and MOVPE with electron concentrations in the range (7.7 × 1017-6 × 1018) cm-3 and find that the energy positions and shape of the spectra depend on the impurity concentration. By modeling the experimental PL spectra of the InN layers we show that spectra can be nicely interpreted in the framework of the FBRR model with specific peculiarities for different doping levels. Analyzing simultaneously the shape and energy position of the InN emission spectra we determine the fundamental bandgap energy of InN to vary between Eg = 692 meV for effective mass mn0 = 0.042m0 and Eg =710 meV for mn0 = 0.1m0. © 2004 Elsevier Ltd. All rights reserved.

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2004. Vol. 36, no 4-6, 563-571 p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-45620DOI: 10.1016/j.spmi.2004.09.013OAI: oai:DiVA.org:liu-45620DiVA: diva2:266516
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Paskova, TanjaPaskov, PlamenMagnusson, BjörnMonemar, Bo

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The Institute of TechnologyDepartment of Physics, Chemistry and BiologyMaterials Science
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