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Properties of Al-SrTiO3-ITO capacitors for microelectronic device applications
Comp. Engineering/Informatics Dept., University of Patras, Patras 26500, Greece.
Laboratorio MDM-INFM, Agrate Briana 20041, Italy.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics .ORCID iD: 0000-0002-1744-7322
2004 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 51, no 7, 1202-1205 p.Article in journal (Refereed) Published
Abstract [en]

Growth of SrTiO3 (STO) thin films on indium tin oxide (ITO) substrates took place by RF magnetron sputtering under various deposition conditions. Subsequent AI metallization created metal-insulator-metal (MIM) capacitors. The properties of such capacitors were investigated by means of structural and electrical measurements, revealing the films transparency, the dielectric constant, the switching time characteristics, and the trapped charges density. Dielectric constant values as high as 120 were obtained for low frequencies of around 2 kHz, the switching time was found to be 3.2 µs and the trapped charges were found equal to 2.9 nCcm-2. The results showed that the films were suitable for use in electronic devices where high capacitance is required and for potential applications in optical devices. © 2004 IEEE.

Place, publisher, year, edition, pages
2004. Vol. 51, no 7, 1202-1205 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-45696DOI: 10.1109/TED.2004.829900OAI: oai:DiVA.org:liu-45696DiVA: diva2:266592
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Helmersson, Ulf

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