Radiation resistance of transistor- and diode-type SiC detectors irradiated with 8-MeV protons
2004 (English)In: Semiconductors (Woodbury, N.Y.), ISSN 1063-7826, Vol. 38, no 7, 807-811 p.Article in journal (Refereed) Published
Nuclear-particle detectors based on SiC with a structure composed of an n+-type substrate, a p-type epitaxial layer, and a Schottky barrier are studied. Structures with a ~10-µm-thick 6H-SiC layer exhibit transistor properties, whereas those with a ~30-µm-thick 4H-SiC layer exhibit diode properties. It is established that a more than tenfold amplification of the signal is observed in the transistor-type structure. The amplification is retained after irradiation with 8-MeV protons with a dose of at least 5 × 1013 cm-2, in this case, the resolution is =10%. Amplification of the signal was not observed in the structures of diode type. However, there were diode-type detectors with a resolution of ˜3%, which is acceptable for a number of applications, even after irradiation with the highest dose of 2 × 1014 cm-2. © 2004 MAIK "Nauka/Interperiodica".
Place, publisher, year, edition, pages
2004. Vol. 38, no 7, 807-811 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-45705DOI: 10.1134/1.1777605OAI: oai:DiVA.org:liu-45705DiVA: diva2:266601