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Radiation resistance of transistor- and diode-type SiC detectors irradiated with 8-MeV protons
Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russian Federation.
Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russian Federation.
Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russian Federation.
Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russian Federation.
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2004 (English)In: Semiconductors (Woodbury, N.Y.), ISSN 1063-7826, Vol. 38, no 7, 807-811 p.Article in journal (Refereed) Published
Abstract [en]

Nuclear-particle detectors based on SiC with a structure composed of an n+-type substrate, a p-type epitaxial layer, and a Schottky barrier are studied. Structures with a ~10-µm-thick 6H-SiC layer exhibit transistor properties, whereas those with a ~30-µm-thick 4H-SiC layer exhibit diode properties. It is established that a more than tenfold amplification of the signal is observed in the transistor-type structure. The amplification is retained after irradiation with 8-MeV protons with a dose of at least 5 × 1013 cm-2, in this case, the resolution is =10%. Amplification of the signal was not observed in the structures of diode type. However, there were diode-type detectors with a resolution of ˜3%, which is acceptable for a number of applications, even after irradiation with the highest dose of 2 × 1014 cm-2. © 2004 MAIK "Nauka/Interperiodica".

Place, publisher, year, edition, pages
2004. Vol. 38, no 7, 807-811 p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-45705DOI: 10.1134/1.1777605OAI: oai:DiVA.org:liu-45705DiVA: diva2:266601
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2011-01-12

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Syväjärvi, MikaelYakimova, Rositsa

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