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Self-diffusion of 12C and 13C in intrinsic 4H-SiC
Royal Institute of Technology, Lab. of Mat./Semiconduct. Physics, P.O.B. Electrum 229, SE-164 40 Kista, Sweden.
Royal Institute of Technology, Lab. of Mat./Semiconduct. Physics, P.O.B. Electrum 229, SE-164 40 Kista, Sweden, Institute of Applied Physics, University of Hamburg, Jungiusstrasse 11, D-20355 Hamburg, Germany.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
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2004 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 95, no 12, 8469-8471 p.Article in journal (Refereed) Published
Abstract [en]

The study of self-diffusion of carbon (12C and 13C) in low-doped (intrinsic) 4H-SiC using secondary ion mass spectroscopy (SIMS) was presented. A two layer 13C enriched structure with 13C/12C ratios of 0.01 and 0.1, respectively, was prepared by using vapor phase epitaxy. The subsequent anneals were carried out in Ar atmosphere in a rf heated furnace between 2100 and 2350°C for 15 min-40 h. A small variation in the enriched 13C concentration and in the layer thickness over the wafer was also presented.

Place, publisher, year, edition, pages
2004. Vol. 95, no 12, 8469-8471 p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-45712DOI: 10.1063/1.1751229OAI: oai:DiVA.org:liu-45712DiVA: diva2:266608
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Janzén, Erik

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