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In-situ  stress measurement during the deposition of CN x thin films by unbalanced magnetron sputtering; formation of high levels of stress with 28 eV ion irradiation
Lab. de Mëtallurgie Physique, UMR 6630-CNRS, Téléport 2, Boulevard Pierre et Marie Curie, Chasseneuil Cédex, France.
Materials Research Laboratory, University of Illinois, 104 S. Goodwin Ave., Urbana, IL 61801, United States.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
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2004 (English)In: Philosophical Magazine Letters, ISSN 0950-0839, E-ISSN 1362-3036, Vol. 84, no 6, 395-403 p.Article in journal (Refereed) Published
Abstract [en]

Stress development during growth of CN x films by unbalanced magnetron sputtering has been investigated with an in-situ laser deflection technique. The stress is initially tensile, then it becomes compressive, reaching a maximum of as much as 7 GPa. These are anomalously high stress levels compared with pure carbon, considering the low ion energies (28 eV) and ion-to-neutral arrival rate ratio (<1) employed. This phenomenon is explained by the formation of a fullerene-like microstructure and nitrogen substitution at the growth surface. An accompanying increased reactivity of carbon atoms promotes sp3 bonding or other cross-linking of curved basal planes with resulting film densification.

Place, publisher, year, edition, pages
2004. Vol. 84, no 6, 395-403 p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-45721DOI: 10.1080/09500830410001716140OAI: oai:DiVA.org:liu-45721DiVA: diva2:266617
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Czigany, ZsoltNeidhardt, JörgHultman, Lars

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