In-situ stress measurement during the deposition of CN x thin films by unbalanced magnetron sputtering; formation of high levels of stress with 28 eV ion irradiation
2004 (English)In: Philosophical Magazine Letters, ISSN 0950-0839, E-ISSN 1362-3036, Vol. 84, no 6, 395-403 p.Article in journal (Refereed) Published
Stress development during growth of CN x films by unbalanced magnetron sputtering has been investigated with an in-situ laser deflection technique. The stress is initially tensile, then it becomes compressive, reaching a maximum of as much as 7 GPa. These are anomalously high stress levels compared with pure carbon, considering the low ion energies (28 eV) and ion-to-neutral arrival rate ratio (<1) employed. This phenomenon is explained by the formation of a fullerene-like microstructure and nitrogen substitution at the growth surface. An accompanying increased reactivity of carbon atoms promotes sp3 bonding or other cross-linking of curved basal planes with resulting film densification.
Place, publisher, year, edition, pages
2004. Vol. 84, no 6, 395-403 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-45721DOI: 10.1080/09500830410001716140OAI: oai:DiVA.org:liu-45721DiVA: diva2:266617