Gap-gate field effect gas sensing device for chemical image generation
2004 (English)In: Applied Physics Letters, ISSN 0003-6951, Vol. 84, no 15, 2946-2948 p.Article in journal (Refereed) Published
A field effect chemically sensing device, suited for the generation of scanning light pulse technique (SLPT) chemical images, was proposed. The device was a MOS capacitor made on p-Si (10 ?), thermally oxidized to 120 nm and metallized on its underside with 200 nm of Al. The biasing electrodes were two parallel Al tracks 100 nm thick spaced 1 mm from each other. The results demonstrate the complete separation between biasing and sensing functions in devices designed for SLPT chemical image generation.
Place, publisher, year, edition, pages
2004. Vol. 84, no 15, 2946-2948 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-45771DOI: 10.1063/1.1703838OAI: oai:DiVA.org:liu-45771DiVA: diva2:266667