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Gap-gate field effect gas sensing device for chemical image generation
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Applied Physics .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Applied Physics .
Faculty of Engineering, Saitama University, 255 Shimo-Okubo, Urawa 338, Japan.
2004 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 84, no 15, 2946-2948 p.Article in journal (Refereed) Published
Abstract [en]

A field effect chemically sensing device, suited for the generation of scanning light pulse technique (SLPT) chemical images, was proposed. The device was a MOS capacitor made on p-Si (10 ?), thermally oxidized to 120 nm and metallized on its underside with 200 nm of Al. The biasing electrodes were two parallel Al tracks 100 nm thick spaced 1 mm from each other. The results demonstrate the complete separation between biasing and sensing functions in devices designed for SLPT chemical image generation.

Place, publisher, year, edition, pages
2004. Vol. 84, no 15, 2946-2948 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-45771DOI: 10.1063/1.1703838OAI: oai:DiVA.org:liu-45771DiVA: diva2:266667
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Filippini, DanielLundström, Ingemar

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