liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
HVPE-GaN: Comparison of emission properties and microstructure of films grown on different laterally overgrown templates
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Show others and affiliations
2004 (English)In: Diamond and related materials, ISSN 0925-9635, Vol. 13, no 4-8, 1125-1129 p.Article in journal (Refereed) Published
Abstract [en]

We report on a comparative study of defect and emission distributions in thick hydride vapor phase epitaxial (HVPE) GaN films grown on two different patterned template structures separately produced by multi-step procedures using metalorganic vapor phase epitaxy (MOVPE). The observed differences in the microstructures and emission distributions at the early stages of the growth in both cases were related to the change of the dominating growth mode sequence and point defects incorporation. Both template structures were found to favor formation of voids in the coalescence regions, which leads to a partial strain relaxation and allows overgrowth of thicker films without cracks. © 2003 Elsevier B.V. All rights reserved.

Place, publisher, year, edition, pages
2004. Vol. 13, no 4-8, 1125-1129 p.
Keyword [en]
CL, Emission distribution, GaN quasi-substrates, Microstructure, TEM
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-45775DOI: 10.1016/j.diamond.2003.10.072OAI: oai:DiVA.org:liu-45775DiVA: diva2:266671
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2011-01-12

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Paskova, TanjaPaskov, PlamenMonemar, Bo

Search in DiVA

By author/editor
Paskova, TanjaPaskov, PlamenMonemar, Bo
By organisation
The Institute of TechnologyDepartment of Physics, Chemistry and BiologyMaterials Science
In the same journal
Diamond and related materials
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 50 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf