Polarized photoluminescence of exciton-polaritons in free-standing GaN
2004 (English)In: Physica status solidi. A, Applied research, ISSN 0031-8965, Vol. 201, no 4, 678-685 p.Article in journal (Refereed) Published
We report on the polarization properties of the exciton-polariton modes in GaN. The dispersion curves and the expected emission lineshape of polaritons for all polarization configurations are calculated taking into account the spatial dispersion and the simultaneous exciton-photon coupling of all optically active states. An experimental study of the exciton-polariton luminescence in a free-standing GaN layer is also performed. The spectra reveal a clear difference between the emissions polarized perpendicular and parallel to the c-axis of the crystal. The experimental results are discussed in terms of optical selection rules and population of the polariton states. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Place, publisher, year, edition, pages
2004. Vol. 201, no 4, 678-685 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-45805DOI: 10.1002/pssa.200304093OAI: oai:DiVA.org:liu-45805DiVA: diva2:266701