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Polarized photoluminescence of exciton-polaritons in free-standing GaN
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
2004 (English)In: Physica status solidi. A, Applied research, ISSN 0031-8965, E-ISSN 1521-396X, Vol. 201, no 4, 678-685 p.Article in journal (Refereed) Published
Abstract [en]

We report on the polarization properties of the exciton-polariton modes in GaN. The dispersion curves and the expected emission lineshape of polaritons for all polarization configurations are calculated taking into account the spatial dispersion and the simultaneous exciton-photon coupling of all optically active states. An experimental study of the exciton-polariton luminescence in a free-standing GaN layer is also performed. The spectra reveal a clear difference between the emissions polarized perpendicular and parallel to the c-axis of the crystal. The experimental results are discussed in terms of optical selection rules and population of the polariton states. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Place, publisher, year, edition, pages
2004. Vol. 201, no 4, 678-685 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-45805DOI: 10.1002/pssa.200304093OAI: oai:DiVA.org:liu-45805DiVA: diva2:266701
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Paskov, PlamenPaskova, TanjaHoltz, Per-OlofMonemar, Bo

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