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Electrical resistivity of acceptor carbon in GaAs
Ferreira da Silva, A., Instituto de Física, Lab. de Propriedades Óticas, Camp. Universitário de Ondina, 40210-340 Salvador, Bahia, Brazil.
Instituto de Física, Lab. de Propriedades Óticas, Camp. Universitário de Ondina, 40210-340 Salvador, Bahia, Brazil.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics .ORCID iD: 0000-0002-6281-868X
Condensed Matter Theory Group, Department of Physics, Uppsala University, SE-75121 Uppsala, Sweden, National Renewable Energy Laboratory, Golden, CO 80401.
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2004 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 95, no 5, 2532-2535 p.Article in journal (Refereed) Published
Abstract [en]

The resistivity of GaAs implanted with carbon acceptors for concentrations spanning the insulating to the metallic regimes were investigated experimentally and theoretically between room temperature and 1.7 K. The resistivities obtained experimentally were compared with resistivity values calculated from a generalized Drude approach. The value of the critical impurity concentration was found to be about 1018cm-3. Good agreement was obtained between the experimental results and calculations.

Place, publisher, year, edition, pages
2004. Vol. 95, no 5, 2532-2535 p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-45807DOI: 10.1063/1.1645971OAI: oai:DiVA.org:liu-45807DiVA: diva2:266703
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Sernelius, Bo

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