Electrical resistivity of acceptor carbon in GaAs
2004 (English)In: Journal of Applied Physics, ISSN 0021-8979, Vol. 95, no 5, 2532-2535 p.Article in journal (Refereed) Published
The resistivity of GaAs implanted with carbon acceptors for concentrations spanning the insulating to the metallic regimes were investigated experimentally and theoretically between room temperature and 1.7 K. The resistivities obtained experimentally were compared with resistivity values calculated from a generalized Drude approach. The value of the critical impurity concentration was found to be about 1018cm-3. Good agreement was obtained between the experimental results and calculations.
Place, publisher, year, edition, pages
2004. Vol. 95, no 5, 2532-2535 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-45807DOI: 10.1063/1.1645971OAI: oai:DiVA.org:liu-45807DiVA: diva2:266703