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A Simple Model for Calculating the Growth Rate of Epitaxial Layers of Silicon Carbide in Vacuum
Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg 194021, Russian Federation.
Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg 194021, Russian Federation.
Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg 194021, Russian Federation.
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
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2004 (English)In: Semiconductors (Woodbury, N.Y.), ISSN 1063-7826, E-ISSN 1090-6479, Vol. 38, no 2, p. 150-152Article in journal (Refereed) Published
Abstract [en]

The temperature dependence of the growth rate of epitaxial layers of silicon carbide in vacuum was calculated within the simple model based on the Hertz-Knudsen equation, taking into account the temperature-dependent sticking coefficient. The calculation results fit the experimental data well. © 2004 MAIK "Nauka/Interperiodica".
Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2004. Vol. 38, no 2, p. 150-152
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Condensed Matter Physics
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URN: urn:nbn:se:liu:diva-45828DOI: 10.1134/1.1648365ISI: 000188700900003OAI: oai:DiVA.org:liu-45828DiVA, id: diva2:266724
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13Bibliographically approved

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Syväjärvi, MikaelYakimova, Rositsa

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Department of Physics, Chemistry and BiologyThe Institute of Technology
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Semiconductors (Woodbury, N.Y.)
Condensed Matter Physics

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