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Optical hall effect in hexagonal InN
Univ Nebraska, Dept Elect Engn, Lincoln, NE 68588 USA.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY USA.
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2008 (English)In: Journal of Electronic Materials, ISSN 0361-5235, E-ISSN 1543-186X, Vol. 37, no 5, 611-615 p.Article in journal (Refereed) Published
Abstract [en]

Measurements of the optical Hall effect in naturally doped high-quality wurtzite-structure InN thin films by generalized ellipsometry reveal that both the surface and the interior (bulk) free electron densities decrease with power-law dependencies on the film thickness. We discover a significant deviation between the bulk electron and dislocation densities. This difference is attributed here to the existence of surface defects with activation mechanism different from bulk dislocations and identifies the possible origin of the so far persistent natural n-type conductivity in InN. We further quantify the anisotropy of the Gamma-point effective mass.

Place, publisher, year, edition, pages
2008. Vol. 37, no 5, 611-615 p.
Keyword [en]
InN, electronic properties, electron effective mass, infrared and THz magneto-optic ellipsometry
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-45899DOI: 10.1007/s11664-008-0385-8OAI: oai:DiVA.org:liu-45899DiVA: diva2:266795
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Darakchieva, VanyaMonemar, Bo

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