Optical and electronic properties of GaInNP alloys - a new material system for lattice matching to GaAs
2008 (English)In: Physica status solidi. A, Applied research, ISSN 0031-8965, E-ISSN 1521-396X, Vol. 205, no 1, 101-106 p.Article in journal (Refereed) Published
In this paper we will review our recent results from optical characterization studies of GaInNP. We will show that N incorporation in these alloys affects their structural and defect properties, as well as the electronic structure. The main structural changes include (i) increasing carrier localization due to strong compositional fluctuations, which is typical for all dilute nitrides, and (ii) N-induced long range ordering effects, specific for GaInNP. The observed degradation of radiative efficiency of the alloys upon increasing N content is attributed to formation of several defects acting as centres of efficient non-radiative recombination. One of the defects is identified as a complex involving a Ga interstitial atom. N incorporation is also found to change the band line up from the type I in the GaInP/GaAs structures to the type 11 in the GaInNP/GaAs heterojunctions with [N] > 0.5%. For the range of N compositions studied ([N] <= 2%), a conduction band offset at the GaInNP/GaAs interface is found to nearly linearly depend on [N] at -0.10 eV/%, whereas the valence band offset remains unaffected. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Place, publisher, year, edition, pages
2008. Vol. 205, no 1, 101-106 p.
National CategoryEngineering and Technology Condensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-45908DOI: 10.1002/pssa.200777457OAI: oai:DiVA.org:liu-45908DiVA: diva2:266804