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Investigation of ZnO as a perspective material for photonics
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Inst Problems Mat Sci, UA-03680 Kiev, Ukraine.
Inst Energy Technol, N-2027 Kjeller, Norway.
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2008 (English)In: Physica Status Solidi (a) applications and materials science, ISSN 1862-6300, E-ISSN 1862-6319, Vol. 205, no 1, 144-149 p.Article in journal (Refereed) Published
Abstract [en]

Emissive properties of ZnO are of great interests in terms of the UV LED device design. The persistent "green" luminescence due to deep defect is an obstacle for obtaining an intense UV emission, expected from ZnO. We report the positive role of thermally diffused H toward quenching the defect emission in ZnO. It is suggested that hydrogen passivates defects responsible for DLE, resulting in efficient near band edge luminescence. As-grown ZnO/SiNx :H/Si films, deposited at 350 degrees C demonstrate intense narrow peaks of UV emission at 380 nm and a ratio of emission intensities, NBE/DLE approximate to 42. [GRAPHICS]

Place, publisher, year, edition, pages
2008. Vol. 205, no 1, 144-149 p.
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Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-45909DOI: 10.1002/pssa.200776838OAI: oai:DiVA.org:liu-45909DiVA: diva2:266805
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-05-11

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Khranovskyy, VolodymyrYazdi, GholamrezaYakimova, Rositsa

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Khranovskyy, VolodymyrYazdi, GholamrezaYakimova, Rositsa
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