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Dislocations at the interface between sapphire and GaN
Helsinki Univ Technol, Micro & Nanosci Lab, Espoo 02015, Finland.
Helsinki Univ Technol, Micro & Nanosci Lab, Espoo 02015, Finland.
Helsinki Univ Technol, Micro & Nanosci Lab, Espoo 02015, Finland.
Helsinki Univ Technol, Micro & Nanosci Lab, Espoo 02015, Finland.
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2008 (English)In: Journal of materials science. Materials in electronics, ISSN 0957-4522, Vol. 19, no 2, 143-148 p.Article in journal (Refereed) Published
Abstract [en]

GaN layers grown by metal organic vapour phase epitaxy on sapphire were imaged by synchrotron radiation X-ray topography. The threading dislocations could not be resolved in the topographs due to their high density, but a smaller density of about 10(5) cm(-2) defects were seen in the interface between GaN and sapphire by utilizing large-area back-reflection topography for the sapphire substrates. The misfit dislocation images in the topographs form a well-resolved cellular network, in which the average cell size is roughly 30 mu m. Different cell shapes in the misfit dislocation networks are observed on different samples. Also, images of small-angle grains of similar size were found in transmission section topographs of the GaN layers.

Place, publisher, year, edition, pages
2008. Vol. 19, no 2, 143-148 p.
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Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-45916DOI: 10.1007/s10854-007-9307-4OAI: oai:DiVA.org:liu-45916DiVA: diva2:266812
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2011-01-10

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Bergman, Peder

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