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Phosphorus-related luminescence in SiC
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.ORCID iD: 0000-0001-5768-0244
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
2006 (English)In: Physica Scripta, Vol. T126, 2006, Vol. T126, 45-49 p.Conference paper, Published paper (Refereed)
Abstract [en]

We report a photoluminescence (PL) study from n-type phosphorus-doped SiC epilayers, which reveals a PL spectrum constituted by a set of sharp lines and interpreted as excitons bound to the P donor. Depending on the polytype, the PL spectrum consists of one or several zero-phonon lines, which have photon energies very close to the nitrogen-bound excitons and they are followed by their phonon assisted replicas. The intensity of the PL spectrum depends on the P concentration introduced during the growth of the epilayers but can be reduced by the presence of the nitrogen donor.

Place, publisher, year, edition, pages
2006. Vol. T126, 45-49 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-45949DOI: 10.1088/0031-8949/2006/T126/010OAI: oai:DiVA.org:liu-45949DiVA: diva2:266845
Conference
Nordic Semiconductor Meeting 21
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2014-10-08

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Henry, AnneJanzén, Erik

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