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Developments in the growth of wide bandgap semiconductors
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Materials Science .
2006 (English)In: Physica Scripta, ISSN 0031-8949, E-ISSN 1402-4896, Vol. T126, 121-126 p.Article in journal (Refereed) Published
Abstract [en]

In this review we consider SiC, GaN, AlN and ZnO as belonging to the same class of compound wide bandgap semiconductors with hexagonal (wurtzite) structure. As such these materials exhibit some similar physical and electronic properties, but the level of material quality is distinctly different. This issue has been discussed with an emphasis on SiC as being a material with most complicated structure and respectively some specific defects.

Place, publisher, year, edition, pages
2006. Vol. T126, 121-126 p.
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Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-45951DOI: 10.1088/0031-8949/2006/T126/027OAI: oai:DiVA.org:liu-45951DiVA: diva2:266847
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Yakimova, Rositsa

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