Developments in the growth of wide bandgap semiconductors
2006 (English)In: Physica Scripta, ISSN 0031-8949, Vol. T126, 121-126 p.Article in journal (Refereed) Published
In this review we consider SiC, GaN, AlN and ZnO as belonging to the same class of compound wide bandgap semiconductors with hexagonal (wurtzite) structure. As such these materials exhibit some similar physical and electronic properties, but the level of material quality is distinctly different. This issue has been discussed with an emphasis on SiC as being a material with most complicated structure and respectively some specific defects.
Place, publisher, year, edition, pages
2006. Vol. T126, 121-126 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-45951DOI: 10.1088/0031-8949/2006/T126/027OAI: oai:DiVA.org:liu-45951DiVA: diva2:266847