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Effect of an (Al,In)N insertion layer on the radiative emission properties of (In,Ga)N/GaN multiple quantum well structures
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials.
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2007 (English)In: Physica Status Solidi (a) applications and materials science, ISSN 1862-6300, E-ISSN 1862-6319, Vol. 204, no 1, 304-308 p.Article in journal (Refereed) Published
Abstract [en]

As an effort to investigate new techniques to reduce the effect of the strong internal polarization fields in (In,Ga)N/GaN quantum well (QW) structures we have studied the influence of inserting a thin wide band-gap AI(0 95)In(0.05)N interlayer inside the QWs, in order to modify the potential and increase the electron-hole overlap. A strong reduction of the decay times of the photoluminescence (PL) was observed in this case at all temperatures up to 300 K, without a strong reduction in PL intensity. The tunneling electron-hole transition across the interlayer is observed to be dominant at room temperature for high excitation conditions. (c) 2007 WILEYNCH Verlag GmbH & Co. KGaA, Weinheim.

Place, publisher, year, edition, pages
2007. Vol. 204, no 1, 304-308 p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-45969DOI: 10.1002/pssa.200673581OAI: oai:DiVA.org:liu-45969DiVA: diva2:266865
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-05-11

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Monemar, BoPaskov, PlamenBergman, Peder

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