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Dissociation of V-Ga-O-N complexes in HVPE GaN by high pressure and high temperature annealing
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2006 (English)In: Physica status solidi. B, Basic research, ISSN 0370-1972, E-ISSN 1521-3951, Vol. 243, no 7, 1436-1440 p.Article in journal (Refereed) Published
Abstract [en]

We have used positron annihilation spectroscopy to study the high-pressure annealing induced thermal recovery of vacancy defects in free-standing GaN grown by hydride vapor phase epitaxy (HYPE). The results show that the in-grown Ga vacancy complexes recover after annealing at 1500-1700 K. Comparison of the experimental positron data with ab-initio calculations indicates that the Doppler broadening measurement of the electron momentum distribution is sensitive enough to distinguish between the N and O atoms surrounding the Ga vacancy. We show that the difference between the isolated V-Ga in electron irradiated GaN and the V-Ga-O-N complexes in highly O-doped GaN is clear, and the Ga vacancy related defect complexes that start dissociating at 1500 K can be identified as V-Ga-O-N pairs.

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2006. Vol. 243, no 7, 1436-1440 p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-46013DOI: 10.1002/pssb.200565109OAI: oai:DiVA.org:liu-46013DiVA: diva2:266909
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

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Paskova, TanjaMonemar, Bo

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