Identification of divacancies in 4H-SiC
2006 (English)In: Physica B: Condensed Matter, Vols. 376-377, 2006, Vol. 376, 334-337 p.Conference paper (Refereed)
The P6/P7 centers in 4H-SiC were studied by electron paramagnetic resonance (EPR) and ab initio supercell calculations. The hyperfine coupling constants of C and Si neighbors obtained by EPR are in good agreement with the calculated values for the neutral divacancy, VCVsi0. Our results suggest that the P6/P7 centers, which were previously assigned to the photo-excited triplet states of the carbon vacancy-carbon antisite pairs in the double positive charge state (VCCsi2+), are related to the triplet ground states of the C-3v/C-1h si configurations of VCVsi0 (c) 2006 Elsevier B.V. All rights reserved.
Place, publisher, year, edition, pages
2006. Vol. 376, 334-337 p.
divacancies, electron paramagnetic resonance, ab initio calculations
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-46023DOI: 10.1016/j.physb.2005.12.086OAI: oai:DiVA.org:liu-46023DiVA: diva2:266919