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Identification of divacancies in 4H-SiC
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
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2006 (English)In: Physica B: Condensed Matter, Vols. 376-377, 2006, Vol. 376, 334-337 p.Conference paper, Published paper (Refereed)
Abstract [en]

The P6/P7 centers in 4H-SiC were studied by electron paramagnetic resonance (EPR) and ab initio supercell calculations. The hyperfine coupling constants of C and Si neighbors obtained by EPR are in good agreement with the calculated values for the neutral divacancy, VCVsi0. Our results suggest that the P6/P7 centers, which were previously assigned to the photo-excited triplet states of the carbon vacancy-carbon antisite pairs in the double positive charge state (VCCsi2+), are related to the triplet ground states of the C-3v/C-1h si configurations of VCVsi0 (c) 2006 Elsevier B.V. All rights reserved.

Place, publisher, year, edition, pages
2006. Vol. 376, 334-337 p.
Keyword [en]
divacancies, electron paramagnetic resonance, ab initio calculations
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-46023DOI: 10.1016/j.physb.2005.12.086OAI: oai:DiVA.org:liu-46023DiVA: diva2:266919
Conference
ICDS-23
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2010-12-13

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Nguyen, Tien SonGali, AdamMagnusson, BjörnJanzén, Erik

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Semiconductor MaterialsThe Institute of TechnologyDepartment of Physics, Chemistry and Biology
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