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Pulsed EPR studies of phosphorus shallow donors in diamond and SiC
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2006 (English)In: Physica B, Vols. 376-377, 2006, Vol. 376, 358-361 p.Conference paper (Refereed)
Abstract [en]

Phosphorus shallow donors having the symmetry lower than T-d are studied by pulsed EPR. In diamond:P and 3C-SiC:P, the symmetry is lowered to D-2d and the density of the donor wave function on the phosphorus atom exhibits a predominant p-character. In 4H-SiC:P with the site symmetry of C-3v, the A(1) ground state of the phosphorus donors substituting at the quasi-cubic site of silicon shows an axial character of the distribution of the donor wave function in the vicinity of the phosphorus atom. (c) 2005 Elsevier B.V. All rights reserved.

Place, publisher, year, edition, pages
2006. Vol. 376, 358-361 p.
Keyword [en]
pulsed EPR, donors, diamond, SiC
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-46024DOI: 10.1016/j.physb.2005.12.092OAI: diva2:266920
ICDS-23 2005
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2014-10-08

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Nguyen, Tien SonHenry, AnneGali, AdamJanzén, Erik
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Semiconductor MaterialsThe Institute of TechnologyDepartment of Physics, Chemistry and Biology
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