A hydrogen-related shallow donor in GaN?
2006 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, Vol. 376, 460-463 p.Article in journal (Refereed) Published
We present photoluminescence (PL) data for deliberately O-doped, high-resistive GaN samples where a new shallow donor-bound exciton (DBE) peak at about 3.4746 eV (corrected for strain shift) at 2 K appears. This DBE is strongly enhanced upon annealing in the entire range 450-900 degrees C. The possible relation of this DBE to a metastable H donor state is discussed. (c) 2006 Elsevier B.V. All rights reserved.
Place, publisher, year, edition, pages
2006. Vol. 376, 460-463 p.
GaN, hydrogen, donor
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-46026DOI: 10.1016/j.physb.2005.12.118OAI: oai:DiVA.org:liu-46026DiVA: diva2:266922