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Point defects in dilute nitride III-N-As and III-N-P
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0002-6405-9509
Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-7155-7103
2006 (English)Conference paper, Published paper (Refereed)
Abstract [en]

We provide a brief review of our recent results from optically detected magnetic resonance studies of grown-in non-radiative defects in two most important dilute nitride system s-Ga(In)NAs grown on GaAs substrates and Ga(Al,In)NP grown on Si and GaP substrates. These results have led to the identification of defect complexes in the alloys, involving intrinsic defects such as As-Ga, antisites and Ga-i self-interstitials. They have also shed light on formation mechanisms of the defects and on their role in non-radiative carrier recombination that is harmful to the performance of potential optoelectronic and photonic devices based on these dilute nitrides. (c) 2005 Elsevier B.V. All rights reserved.

Place, publisher, year, edition, pages
2006. Vol. 376, 545-551 p.
Series
PHYSICA B-CONDENSED MATTER, ISSN 0921-4526 ; 376
Keyword [en]
dilute nitrides, defects, ODMR, non-radiative
National Category
Engineering and Technology Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-46029DOI: 10.1016/j.physb.2005.12.138OAI: oai:DiVA.org:liu-46029DiVA: diva2:266925
Conference
23rd International Conference on Defects in Semiconductors (ICDS-23)
Note
INVITED TALKAvailable from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-03-27

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Chen, WeiminBuyanova, Irina

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