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Unusual effects of hydrogen on electronic and lattice properties of GaNP alloys
Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-7155-7103
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics.
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2006 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, Vol. 376, 568-570 p.Article in journal (Refereed) Published
Abstract [en]

Hydrogen incorporation is shown to cause passivation of various N-related localized states and partial neutralization of N-induced changes in the electronic structure of the GaNxP1-x alloys with x < 0.008. According to the performed X-ray diffraction measurements, the hydrogenation is also found to cause strong expansion of the GaNP lattice which even changes from a tensile strain in the as-grown GaNP epilayers to a compressive strain in the post-hydrogenated structures with the highest H concentration. By comparing results obtained using two types of hydrogen treatments, i.e. by implantation from a Kaufman source and by using a remote dc H plasma, the observed changes are shown to be inherent to H due to its efficient complexing with N atoms, whereas possible effects of implantation damage are only marginal. (c) 2005 Elsevier B.V. All rights reserved.

Place, publisher, year, edition, pages
2006. Vol. 376, 568-570 p.
Keyword [en]
hydrogen, passivation, GaNP, electronic structure
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-46030DOI: 10.1016/j.physb.2005.12.143OAI: oai:DiVA.org:liu-46030DiVA: diva2:266926
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-03-27

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Buyanova, Irina AIzadifard, MortezaSeppänen, TimoBirch, JensChen, Weimin

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Buyanova, Irina AIzadifard, MortezaSeppänen, TimoBirch, JensChen, Weimin
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Functional Electronic MaterialsThe Institute of TechnologyDepartment of Physics, Chemistry and BiologyThin Film Physics
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Physica. B, Condensed matter
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