Unusual effects of hydrogen on electronic and lattice properties of GaNP alloys
2006 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, Vol. 376, 568-570 p.Article in journal (Refereed) Published
Hydrogen incorporation is shown to cause passivation of various N-related localized states and partial neutralization of N-induced changes in the electronic structure of the GaNxP1-x alloys with x < 0.008. According to the performed X-ray diffraction measurements, the hydrogenation is also found to cause strong expansion of the GaNP lattice which even changes from a tensile strain in the as-grown GaNP epilayers to a compressive strain in the post-hydrogenated structures with the highest H concentration. By comparing results obtained using two types of hydrogen treatments, i.e. by implantation from a Kaufman source and by using a remote dc H plasma, the observed changes are shown to be inherent to H due to its efficient complexing with N atoms, whereas possible effects of implantation damage are only marginal. (c) 2005 Elsevier B.V. All rights reserved.
Place, publisher, year, edition, pages
2006. Vol. 376, 568-570 p.
hydrogen, passivation, GaNP, electronic structure
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-46030DOI: 10.1016/j.physb.2005.12.143OAI: oai:DiVA.org:liu-46030DiVA: diva2:266926