liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Signatures of grown-in defects in GaInNP alloys grown on a GaAs substrate from magnetic resonance studies
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-7155-7103
Show others and affiliations
2006 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, E-ISSN 1873-2135, Vol. 376, 571-574 p.Article in journal (Refereed) Published
Abstract [en]

Three grown-in defects acting as centers of non-radiative recombination (NR) were detected in GaInNP alloys grown on a GaAs substrate using the optically detected magnetic resonance (ODMR) technique. Among them, one was proposed to be either a Ga-i-related defect or an AS(Ga)-related defect, from the resolved four-line hyperfine structure. The former model was concluded to be more favorable by weighing physical properties of the two defects, e.g. the likelihood for their presence in the studied structures, their spatial location, g-value and effect of rapid thermal annealing (RTA). RTA at 700 degrees C was shown to reduce concentrations of the studied defects but it introduced a new defect that likely directly participates in the monitored radiative recombination process in the RTA-treated samples. (c) 2005 Elsevier B.V. All rights reserved.

Place, publisher, year, edition, pages
2006. Vol. 376, 571-574 p.
Keyword [en]
dilute nitrides, GaInNP, defect, magnetic resonance
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-46031DOI: 10.1016/j.physb.2005.12.144OAI: oai:DiVA.org:liu-46031DiVA: diva2:266927
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Vorona, IgorIzadifard, MortezaBuyanova, Irina AChen, Weimin

Search in DiVA

By author/editor
Vorona, IgorIzadifard, MortezaBuyanova, Irina AChen, Weimin
By organisation
The Institute of TechnologyFunctional Electronic MaterialsDepartment of Physics, Chemistry and Biology
In the same journal
Physica. B, Condensed matter
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 92 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf