Signatures of grown-in defects in GaInNP alloys grown on a GaAs substrate from magnetic resonance studies
2006 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, Vol. 376, 571-574 p.Article in journal (Refereed) Published
Three grown-in defects acting as centers of non-radiative recombination (NR) were detected in GaInNP alloys grown on a GaAs substrate using the optically detected magnetic resonance (ODMR) technique. Among them, one was proposed to be either a Ga-i-related defect or an AS(Ga)-related defect, from the resolved four-line hyperfine structure. The former model was concluded to be more favorable by weighing physical properties of the two defects, e.g. the likelihood for their presence in the studied structures, their spatial location, g-value and effect of rapid thermal annealing (RTA). RTA at 700 degrees C was shown to reduce concentrations of the studied defects but it introduced a new defect that likely directly participates in the monitored radiative recombination process in the RTA-treated samples. (c) 2005 Elsevier B.V. All rights reserved.
Place, publisher, year, edition, pages
2006. Vol. 376, 571-574 p.
dilute nitrides, GaInNP, defect, magnetic resonance
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-46031DOI: 10.1016/j.physb.2005.12.144OAI: oai:DiVA.org:liu-46031DiVA: diva2:266927