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Material properties of dilute nitrides: Ga(In)NAs and Ga(In)NP
Linköping University, The Institute of Technology. Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials.ORCID iD: 0000-0002-6405-9509
Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-7155-7103
2006 (English)Conference paper, Published paper (Refereed)
Abstract [en]

The dramatic effect of incorporating a small amount of nitrogen into Ga(In)As and Ga(In)P on their materials properties, such as effective mass, band alignment, and band structure, is summarized. ©2005 Elsevier B.V. All rights reserved.
Place, publisher, year, edition, pages
2006. Vol. 288, no 1, p. 7-11
Series
JOURNAL OF CRYSTAL GROWTH, ISSN 0022-0248 ; 288
Keywords [en]
band structure of crystalline solids, electron density of states
National Category
Engineering and Technology Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-46045DOI: 10.1016/j.jcrysgro.2005.12.013OAI: oai:DiVA.org:liu-46045DiVA, id: diva2:266941
Conference
3rd International Conference on Materials for Advanced Technologies (ICMAT 2005) and 9th International Conference on Advanced Materials (ICAM 2005)
Note
INVITED TALKAvailable from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-03-27

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Chen, WeiminBuyanova, Irina

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