Material properties of dilute nitrides: Ga(In)NAs and Ga(In)NP
2006 (English)Conference paper (Refereed)
The dramatic effect of incorporating a small amount of nitrogen into Ga(In)As and Ga(In)P on their materials properties, such as effective mass, band alignment, and band structure, is summarized. ©2005 Elsevier B.V. All rights reserved.
Place, publisher, year, edition, pages
2006. Vol. 288, no 1, 7-11 p.
, JOURNAL OF CRYSTAL GROWTH, ISSN 0022-0248 ; 288
band structure of crystalline solids, electron density of states
National CategoryEngineering and Technology Condensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-46045DOI: 10.1016/j.jcrysgro.2005.12.013OAI: oai:DiVA.org:liu-46045DiVA: diva2:266941
3rd International Conference on Materials for Advanced Technologies (ICMAT 2005) and 9th International Conference on Advanced Materials (ICAM 2005)