Growth, morphological and structural characterization of silicon carbide epilayers for power electronic devices applications
2005 (English)In: Crystal research and technology (1981), ISSN 0232-1300, Vol. 40, no 10-Nov, 964-966 p.Article in journal (Refereed) Published
Silicon carbide (SiC) is a wide band gap semiconductor, interesting for its physical properties such as high breakdown field, high saturated drift velocity and high thermal conductivity, which has been intensively studied in the last years. Although the high potentiality of this material, the SiC technology shows at the moment some limitations, indeed, the reliability of SiC-based devices is strictly correlated to the defects present in the crystalline structure. 4H-SiC epilayers were grown by Hot Wall Chemical Vapor Deposition (at 1600 degrees C) and by Sublimation techniques (at 2000 degrees C). A surface investigation of the epilayers has been performed finding particular physical finger-prints correlated with several kind of defects aimed at giving an important feedback to the epitaxial growth processes. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Place, publisher, year, edition, pages
2005. Vol. 40, no 10-Nov, 964-966 p.
SiC, growth, epitaxial layer, defects, optical characterization, structural characterization
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-46064DOI: 10.1002/crat.200410468OAI: oai:DiVA.org:liu-46064DiVA: diva2:266960