liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Growth, morphological and structural characterization of silicon carbide epilayers for power electronic devices applications
Show others and affiliations
2005 (English)In: Crystal research and technology (1981), ISSN 0232-1300, E-ISSN 1521-4079, Vol. 40, no 10-Nov, 964-966 p.Article in journal (Refereed) Published
Abstract [en]

Silicon carbide (SiC) is a wide band gap semiconductor, interesting for its physical properties such as high breakdown field, high saturated drift velocity and high thermal conductivity, which has been intensively studied in the last years. Although the high potentiality of this material, the SiC technology shows at the moment some limitations, indeed, the reliability of SiC-based devices is strictly correlated to the defects present in the crystalline structure. 4H-SiC epilayers were grown by Hot Wall Chemical Vapor Deposition (at 1600 degrees C) and by Sublimation techniques (at 2000 degrees C). A surface investigation of the epilayers has been performed finding particular physical finger-prints correlated with several kind of defects aimed at giving an important feedback to the epitaxial growth processes. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Place, publisher, year, edition, pages
2005. Vol. 40, no 10-Nov, 964-966 p.
Keyword [en]
SiC, growth, epitaxial layer, defects, optical characterization, structural characterization
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-46064DOI: 10.1002/crat.200410468OAI: oai:DiVA.org:liu-46064DiVA: diva2:266960
Available from: 2009-10-11 Created: 2009-10-11 Last updated: 2017-12-13

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Yakimova, RositsaSyväjärvi, MikaelCiechonski, Rafal

Search in DiVA

By author/editor
Yakimova, RositsaSyväjärvi, MikaelCiechonski, Rafal
By organisation
The Institute of TechnologyMaterials Science
In the same journal
Crystal research and technology (1981)
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 76 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf